page 1 of 6 the big deal product overview the AVA-24A-D+ is an ultra-wideband microwave amplifer die fabricated using ingaas phemt technology operating over extremely wide frequency range from 5 to 22 ghz. this model integrates the entire matching network with the majority of the bias circuit, reducing the need for complicated external circuits and simplifying board layouts. these advantages make the AVA-24A-D+ extremely user friendly and enable simple, straightforward use. key features feature advantages ultra-wideband, 5 to 22 ghz very broad frequency range supports a wide array of applications from microwave radio and radar to military communications and countermeasures, among others. excellent gain fatness, 1.3 db minimizes the need for external equalizer networks and gain fattening components, making it a great ft for instrumentation and ew applications. high isolation, 31 to 42 db with high reverse isolation (18 C 30 db directivity), the AVA-24A-D+ is an excellent choice for buffering broadband circuits. it is an ideal lo driver amplifer and provides designers system fexibility and margin when integrating cascaded rf components. single +5v supply ? no hassle associated with amplifers using dual supply such as power supply sequencing. ? integrated output bias-tee simplifes layout and reduces cost. unpackaged die enables the user to integrate the amplifer directly into hybrids. ? ultra-wideband, 5 to 22 ghz ? integrated matching, dc blocks, bias circuits ? unpackaged die form 50 ? 5 to 22 ghz AVA-24A-D+ wideband, microwave monolithic amplifer die notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com
page 2 of 6 product features ? gain, 13.1 db typ. & flatness, 1.6 db ? output power, up to +19.4 dbm typ. ? excellent isolation, 37 db typ. at 12 ghz ? single positive supply voltage, 5.0v ? integrated dc blocks, bias-tee & microwave bypass capacitor ? unconditionally stable typical applications ? military ew and radar ? dbs ? wideband isolation amplifer ? microwave point-to-point radios ? satellite systems general description the AVA-24A-D+ is a wideband monolithic amplifer die fabricated using ingaas phemt technology with outstanding gain fatness up to 22 ghz. it is manufactured using phemt technology and is unconditionally stable. its outstanding isolation enables it to be used as a wideband isolation amplifer or buffer amplifer in a variety of microwave systems. rev. or m153692 AVA-24A-D+ rs/th/cp 160915 50 ? 5 to 22 ghz AVA-24A-D+ ordering information: refer to last page rf-in rf-out dc function description rf-in rf input pad rf-out rf output pad dc (v d1 , v d2 ) dc power supply gnd connected to ground simplifed schematic and pad description wideband, microwave monolithic amplifer die notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com +rohs compliant the +suffix identifies rohs compliance. see our web site for rohs compliance methodologies and qualifications
page 3 of 6 parameter condition (ghz) min. typ. max. units frequency range 5.0 22.0 ghz dc voltage (v d1 , v d2 ) 5.0 v dc current (i d1 +i d2 ) 94 126 147 ma gain 5.0 11.4 db 8.0 13.9 10.0 13.4 12.0 13.0 14.0 12.9 16.0 13.7 22.0 10.6 input return loss 5.0 10.3 db 8.0 32.1 10.0 21.1 12.0 18.1 14.0 17.6 16.0 17.6 22.0 8.8 output return loss 5.0 6.4 db 8.0 12.0 10.0 10.7 12.0 9.9 14.0 10.0 16.0 10.4 22.0 15.9 output ip3 (2) 5.0 32.6 dbm 8.0 27.5 10.0 26.4 12.0 25.3 14.0 24.2 16.0 23.3 22.0 24.4 output power @ 1 db compression 5.0 16.9 dbm 8.0 18.4 10.0 19.0 12.0 19.2 14.0 19.4 16.0 19.2 22.0 16.7 noise figure 5.0 9.3 8.0 5.2 10.0 5.4 12.0 5.8 db 14.0 5.8 16.0 6.1 22.0 6.4 directivity (isolation-gain) 12 24 db dc current variation vs. voltage 0.002 ma/mv thermal resistance 45 c/w electrical specifcations (1) at 25c, zo=50 ?, (refer to characterization circuit, fig.1) absolute maximum ratings (3) parameter ratings operating temperature -40c to 85c channel temperature 150c dc voltage v d1 , v d2 pad (4) 5.5 v dc voltage rf-in &rf out 10 v power dissipation 860 mw dc current v d1 & v d2 (total) 160 ma input power (cw) 20 dbm 1. measured on mini-circuits die characterization test board see characterization test circuit (fig. 1) 2. at pout=8 dbm/tone 3. permanent damage may occur if any of these limits are exceeded. these maximum ratings are not intended for continuous normal operation. measured in industry standard 3x3 min 8-lead mclp package 4. for continuous operation do not exceed 5.2v AVA-24A-D+ wideband monolithic phemt mmic amplifer notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com
page 4 of 6 AVA-24A-D+ figure 1: test circuit used for characterization. gain, return loss, output power at 1db compression (p1 db), output ip3 (oip3) and noise fgure measured using agilents n5242a pna-x microwave network analyzer. c1=100 pf, compex capacitor csa-200-10x10x10x5-g-101-m conditions: 1. gain and return loss: pin= -25dbm 2. output ip3 (oip3): two tones, spaced 1 mhz apart, 8 dbm/tone at output. die layout critical dimensions parameter values die thickness, m 100 die width, m 1230 die length, m 1160 bond pad size, m 80 x 80 fig 3. bonding pad positions bonding pad position (dimensions in m, typical) fig 2. die layout 0 5 10 15 20 25 30 35 40 45 4000 9000 14000 19000 24000 oip3 - minimum (dbm) freq (mhz) -5dbm -3dbm 0dbm 3dbm 5dbm 6dbm 7dbm 8dbm 9dbm 10dbm wideband monolithic phemt mmic amplifer notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com
page 5 of 6 1. storage dice should be stored in a dry nitrogen purged desiccators or equivalent. 2. esd mmic phemt amplifer dice are susceptible to electrostatic and mechanical damage. die are supplied in antistatic protected material, which should be opened in clean room conditions at an appropriately grounded anti-static worksta tion. devices need careful handling using correctly designed collets, vacuum pickup tips or sharp antistatic tweezers to deter esd damage to dice. 3. die attach the die mounting surface must be clean and fat. using conductive silver flled epoxy, recommended epoxies are diemat dm6030hk-pt/h579 or ablestik 84-1lmisr4. apply suffcient epoxy to meet required epoxy bond line thickness, epoxy fllet height and epoxy coverage around total die periphery. parts shall be cured in a nitrogen flled atmosphere per manufacturers cure condition. it is recommended to use antistatic die pick up tools only. 4. wire bonding bond pad openings in the surface passivation above the bond pads are provided to allow wire bonding to the dice gold bond pads. thermosonic bonding is used with minimized ultrasonic content. bond force, time, ultrasonic power and temperature are all critical parameters. suggested wire is pure gold, 1 mil diameter. bonds must be made from the bond pads on the die to the package or substrate. all bond wires should be kept as short as low as reasonable to minimize performance degradation due to undesirable series inductance. assembly diagram assembly and handling procedure recommended wire length, typical wire wire length (mm) wire loop height (mm) rf-in, rf-out 0.25 0.15 vd1, vd2 0.50 0.15 pcb information pcb material rogers 435013 dielectric thickness 10 mil copper thickness (top & bottom) 0.5 oz. finish enig AVA-24A-D+ wideband monolithic phemt mmic amplifer notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com
page 6 of 6 AVA-24A-D+ performance data data table swept graphs s-parameter (s2p files) data set with and without port extension (.zip fle) case style die die ordering and packaging information quantity, package model no. small, gel - pak: 10,50,100 kgd* medium ? , partial wafer: kgd*<5k large ? , full wafer AVA-24A-Dg+ AVA-24A-Dp+ AVA-24A-Df+ ? available upon request contact sales representative refer to an-60-067 environmental ratings env-80 additional notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp d. mini-circuits does not warrant the accuracy or completeness of the information, text, graphics and other items contained within this document and same are provided as an accommodation and on an as is basis, with all faults. e. purchasers of this part are solely responsible for proper storing, handling, assembly and processing of known good dice (including, without limitation, proper esd preventative measures, die preparation, die attach, wire bond ing and related assembly and test activities), and mini-circuits assumes no responsibility therefor or for environmental effects on known good dice. f. mini-circuits and the mini-circuits logo are registered trademarks of scientifc components corporation d/b/a mini- circuits. all other third-party trademarks are the property of their respective owners. a reference to any third-party trademark does not constitute or imply any endorsement, affliation, sponsorship, or recommendation by any such third-party of mini-circuits or its products. esd rating** human body model (hbm): class 1a (250 to <500v) in accordance with ansi/esd stm 5.1 - 2001 machine model (mm): class m1 (50v) in accordance with ansi/esd stm5.2-1999 additional detailed technical information additional information is available on our dash board. *known good dice (kgd) means that the dice in question have been subjected to mini-circuits dc test performance criteria and measurement instructions and that the parametric data of such dice fall within a predefned range. while dc testing is not defnitive, it does help to provide a higher degree of confdence that dice are capable of meeting typical rf electrical parameters specifed by mini-circuits. ** tested in industry standard 3x3 mm 8-lead mclp package. wideband monolithic phemt mmic amplifer notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com
|
